Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes
نویسندگان
چکیده
منابع مشابه
Wet-Chemical Etching and Cleaning of Silicon
A Introduction Research and manufacturing related to silicon devices, circuits, and systems often relies on the wet-chemical etching of silicon wafers. The dissolution of silicon using liquid solutions is needed for deep etching and micromachining, shaping, and cleaning. Also, wet-chemistries are often used for defect delineation in single crystal silicon materials. In this paper, a review of t...
متن کاملAntireflective silicon nanostructures with hydrophobicity by metal-assisted chemical etching for solar cell applications
We present broadband antireflective silicon (Si) nanostructures with hydrophobicity using a spin-coated Ag ink and by subsequent metal-assisted chemical etching (MaCE). Improved understanding of MaCE, by conducting parametric studies on optical properties, reveals a design guideline to achieve considerably low solar-weighted reflectance (SWR) in the desired wavelength ranges. The resulting Si n...
متن کاملMultiscale modeling of anisotropic wet chemical etching of crystalline silicon
– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...
متن کاملMulticolored vertical silicon nanowires.
We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental d...
متن کاملArea Effect of Reflectance in Silicon Nanowires Grown by Electroless Etching
This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2011
ISSN: 1094-4087
DOI: 10.1364/oe.19.015792